Toshiba Semiconductor and Storage3-SMD, No LeadRoHS
SSM3K59CTB,L3F
MOSFET N-CH 40V 2A CST3B
Category
Subcategory
Transistors Fets Mosfets Single
Package
3-SMD, No Lead
Series
U-MOSVII-H
Status
Active
Datasheet
$0.44 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM3K59CTB,L3F |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 215mOhm @ 1A, 8V |
| Vgs(th) (Max) | 1.2V @ 1mA |
| Gate Charge (Qg) | 1.1 nC @ 4.2 V |
| Input Capacitance (Ciss) | 130 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Drive Voltage | 1.8V, 8V |
| Supplier Device Package | CST3B |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM3K59CTB,L3F by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-SMD, No Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 215mOhm @ 1A, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM3K59CTB,L3F
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 1A, 8V |
| Power Dissipation (Max) | 1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 4.2 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
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