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Toshiba Semiconductor and Storage3-SMD, Flat LeadsRoHS

SSM3K341TU,LXHF

AECQ MOSFET NCH 60V 6A SOT323F

SSM3K341TU,LXHF by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

3-SMD, Flat Leads

Series

Automotive, AEC-Q101, U-MOSVIII-H

Status

Active

$0.62 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM3K341TU,LXHF
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature175°C
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)36mOhm @ 4A, 10V
Vgs(th) (Max)2.5V @ 100µA
Gate Charge (Qg)9.3 nC @ 10 V
Input Capacitance (Ciss)550 pF @ 10 V
Power Dissipation (Max)1W (Ta)
Drive Voltage4V, 10V
Supplier Device PackageUFM
RoHSRoHS
Part StatusActive

Application & Notes

SSM3K341TU,LXHF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 36mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 100µA
Rds On (Max) @ Id, Vgs36mOhm @ 4A, 10V
Power Dissipation (Max)1W (Ta)
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C6A (Ta)

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