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Toshiba Semiconductor and StorageSOT-23-3 Flat LeadsRoHS

SSM3K2615R,LF

MOSFET N-CH 60V 2A SOT23F

SSM3K2615R,LF by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-3 Flat Leads

Series

π-MOSV

Status

Active

$0.48 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM3K2615R,LF
Package / CaseSOT-23-3 Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)300mOhm @ 1A, 10V
Vgs(th) (Max)2V @ 1mA
Input Capacitance (Ciss)150 pF @ 10 V
Power Dissipation (Max)1W (Ta)
Drive Voltage3.3V, 10V
Supplier Device PackageSOT-23F
RoHSRoHS
Part StatusActive

Application & Notes

SSM3K2615R,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-3 Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs300mOhm @ 1A, 10V
Power Dissipation (Max)1W (Ta)
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)3.3V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

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