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Toshiba Semiconductor and StorageSOT-723RoHS

SSM3K15AMFV,L3F

MOSFET N-CH 30V 100MA VESM

SSM3K15AMFV,L3F by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

SOT-723

Series

U-MOSIII

Status

Active

$0.30 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM3K15AMFV,L3F
Package / CaseSOT-723
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)3.6Ohm @ 10mA, 4V
Vgs(th) (Max)1.5V @ 100µA
Input Capacitance (Ciss)13.5 pF @ 3 V
Power Dissipation (Max)150mW (Ta)
Drive Voltage2.5V, 4V
Supplier Device PackageVESM
RoHSRoHS
Part StatusActive

Application & Notes

SSM3K15AMFV,L3F by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-723 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.6Ohm @ 10mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 100µA
Rds On (Max) @ Id, Vgs3.6Ohm @ 10mA, 4V
Power Dissipation (Max)150mW (Ta)
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds13.5 pF @ 3 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)

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