SQJ942EP-T1_GE3
MOSFET 2 N-CH 40V POWERPAK SO8
Transistors Fets Mosfets Arrays
PowerPAK® SO-8
Automotive, AEC-Q101, TrenchFET®
Active
$1.15 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SQJ942EP-T1_GE3 |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) | 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V |
| Vgs(th) (Max) | 2.3V @ 250µA |
| Gate Charge (Qg) | 19.7nC @ 10V, 33.8nC @ 10V |
| Input Capacitance (Ciss) | 809pF @ 20V, 1451pF @ 20V |
| Power Dissipation (Max) | 17W, 48W |
| Supplier Device Package | PowerPAK® SO-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SQJ942EP-T1_GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 40V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SO-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SQJ942EP-T1_GE3
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 17W, 48W |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 19.7nC @ 10V, 33.8nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) (Max) @ Vds | 809pF @ 20V, 1451pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc), 45A (Tc) |
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