SIRB40DP-T1-GE3
MOSFET 2 N-CH 40V POWERPAK SO8
Transistors Fets Mosfets Arrays
PowerPAK® SO-8 Dual
TrenchFET®
Active
$1.47 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIRB40DP-T1-GE3 |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) | 3.25mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.4V @ 250µA |
| Gate Charge (Qg) | 45nC @ 4.5V |
| Input Capacitance (Ciss) | 4290pF @ 20V |
| Power Dissipation (Max) | 46.2W |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIRB40DP-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 40V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SO-8 Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.25mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIRB40DP-T1-GE3
Alternatives & Replacements
View All →SI7956DP-T1-GE3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SQJ202EP-T1_GE3
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SQJ244EP-T1_GE3
MOSFET DUAL N-CHA 40V PPAK SO-8L
SQJ260EP-T1_GE3
MOSFET 2 N-CH 60V POWERPAK SO8
SQJ914EP-T1_GE3
MOSFET 2 N-CH 30V POWERPAK SO8
SI7540ADP-T1-GE3
MOSFET N/P-CH POWERPAK8
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 46.2W |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) (Max) @ Vds | 4290pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
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