SIGC18T60SNCX1SA3
IGBT 3 CHIP 600V WAFER
Transistors Igbts Single
Die
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | SIGC18T60SNCX1SA3 |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SIGC18T60SNCX1SA3 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIGC18T60SNCX1SA3
Alternatives & Replacements
View All →RJP4006AGE-00#P5
IGBTS, 400V, 120A, N-CHANNEL
TIG064E8-TL-H-ON
N-CHANNEL IGBT FOR LIGHT-CONTROL
IRG7PH35UD1-EP
IGBT W/ULTRA-LOW VF DIODE FOR IN
NGTB40N60IHLWG
IGBT 600V 40A TO247
RJP4005ANS-01#Q1
IGBTS, 400V, 150A, N-CHANNEL
FGPF70N30
IGBT 300V 52W TO220F
All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Test Condition | 400V, 20A, 16Ohm, 15V |
| Td (on/off) @ 25°C | 36ns/250ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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