SIGC08T60EX1SA2
IGBT 3 CHIP 600V 15A WAFER
Transistors Igbts Single
Die
TrenchStop™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | SIGC08T60EX1SA2 |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIGC08T60EX1SA2 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIGC08T60EX1SA2
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 15A |
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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