SIF912EDZ-T1-E3
MOSFET 2N-CH 30V 7.4A 6-POWERPAK
Transistors Fets Mosfets Arrays
PowerPAK® 2x5
TrenchFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIF912EDZ-T1-E3 |
| Package / Case | PowerPAK® 2x5 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 19mOhm @ 7.4A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 15nC @ 4.5V |
| Power Dissipation (Max) | 1.6W |
| Supplier Device Package | PowerPAK® (2x5) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SIF912EDZ-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 2x5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 19mOhm @ 7.4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIF912EDZ-T1-E3
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Power - Max | 1.6W |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 7.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A |
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