SIA913DJ-T1-GE3
MOSFET 2P-CH 12V 4.5A SC70-6
Transistors Fets Mosfets Arrays
PowerPAK® SC-70-6 Dual
TrenchFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIA913DJ-T1-GE3 |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 12V |
| Rds On (Max) | 70mOhm @ 3.3A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 12nC @ 8V |
| Input Capacitance (Ciss) | 400pF @ 6V |
| Power Dissipation (Max) | 6.5W |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SIA913DJ-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 12V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SC-70-6 Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 70mOhm @ 3.3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIA913DJ-T1-GE3
Alternatives & Replacements
View All →SIA938DJT-T1-GE3
DUAL N-CHANNEL 20-V (D-S) MOSFET
SIA778DJ-T1-GE3
MOSFET 2N-CH 12V/20V SC70-6
SIA907EDJT-T1-GE3
MOSFET 2P-CH 20V 4.5A SC-70-6L
SIA975DJ-T1-GE3
MOSFET 2P-CH 12V 4.5A SC-70-6
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 6.5W |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 8V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
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