SI7922DN-T1-E3
MOSFET 2N-CH 100V 1.8A 1212-8
Transistors Fets Mosfets Arrays
PowerPAK® 1212-8 Dual
TrenchFET®
Active
$1.85 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI7922DN-T1-E3 |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 195mOhm @ 2.5A, 10V |
| Vgs(th) (Max) | 3.5V @ 250µA |
| Gate Charge (Qg) | 8nC @ 10V |
| Power Dissipation (Max) | 1.3W |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI7922DN-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8 Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 195mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI7922DN-T1-E3
Alternatives & Replacements
View All →SI7900AEDN-T1-E3
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SIS903DN-T1-GE3
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.3W |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
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