What is the minimum order quantity for SI2302DS,215?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 3206 pcs.

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Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

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Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for SI2302DS,215?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for SI2302DS,215?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

NXP USA Inc.TO-236-3, SC-59, SOT-23-3RoHS

SI2302DS,215

Name: SI2302DS,215
Brand: NXP USA Inc.
SKU: SI2302DS,215
Price: 0.09 USD
Availability: PreOrder

MOSFET N-CH 20V 2.5A TO236AB

Parameters

Parameter	Value
Brand	NXP USA Inc.
Model	SI2302DS,215
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Operating Temperature	-65°C ~ 150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	20 V
Rds On (Max)	85mOhm @ 3.6A, 4.5V
Vgs(th) (Max)	650mV @ 1mA
Gate Charge (Qg)	10 nC @ 4.5 V
Input Capacitance (Ciss)	230 pF @ 10 V
Power Dissipation (Max)	830mW (Tc)
Drive Voltage	2.5V, 4.5V
Supplier Device Package	SOT-23 (TO-236AB)
RoHS	RoHS
Part Status	Obsolete

Application & Notes

SI2302DS,215 by NXP USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 85mOhm @ 3.6A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	650mV @ 1mA
Rds On (Max) @ Id, Vgs	85mOhm @ 3.6A, 4.5V
Power Dissipation (Max)	830mW (Tc)
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)

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