SI2301DS-T1-GE3
P-Ch 20V 2.3A MOSFET, SOT-23, 100mΩ, logic-level
Transistors FETs MOSFETs
TO-236-3, SC-59, SOT-23-3
Active
Price available on request
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI2301DS-T1-GE3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | -20V |
| Current - Continuous Drain (Id) | -2.3A |
| Rds On (Max) | 100mΩ @ 2.8A, 4.5V |
| Vgs(th) (Max) | 0.95V @ 250µA |
| Gate Charge (Qg) | 8.5nC @ 4.5V |
| Supplier Device Package | SOT-23-3 |
| RoHS | ROHS3 Compliant |
| Part Status | Active |
Application & Notes
SI2301DS-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at -20V / -2.3A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mΩ @ 2.8A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI2301DS-T1-GE3
Alternatives & Replacements
View All →TP0610K-T1-E3
MOSFET P-CH 60V 185MA SOT23-3
SI2301CDS-T1-GE3
MOSFET P-CH 20V 3.1A SOT23-3
SQ2351ES-T1_BE3
MOSFET P-CH 20V 3.2A SOT23-3
SQ2364EES-T1_GE3
MOSFET N-CH 60V 2A SOT23-3
SI2304DDS-T1-BE3
MOSFET N-CH 30V 3.3A/3.6A SOT23
TP0610K-T1-GE3
MOSFET P-CH 60V 185MA SOT23-3
All Technical Specifications
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | -20V |
| Current - Continuous Drain (Id) | -2.3A |
| Rds On (Max) @ Id, Vgs | 100mΩ @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 0.95V @ 250µA |
| Gate Charge (Qg) | 8.5nC @ 4.5V |
| Drive Voltage | 2.5V, 4.5V |
| Power Dissipation | 710mW |
| Features | P-ch complement to SI2302, high-side load switch, battery protection |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.