Vishay SiliconixSC-70, SOT-323RoHS
SI1302DL-T1-BE3
MOSFET N-CH 30V 600MA SC70-3
Category
Subcategory
Transistors Fets Mosfets Single
Package
SC-70, SOT-323
Status
Active
Datasheet
$0.46 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI1302DL-T1-BE3 |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 480mOhm @ 600mA, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 1.4 nC @ 10 V |
| Power Dissipation (Max) | 280mW (Ta) |
| Supplier Device Package | SC-70-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI1302DL-T1-BE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 480mOhm @ 600mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI1302DL-T1-BE3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 600mA, 10V |
| Power Dissipation (Max) | 280mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
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