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Vishay SiliconixSOT-563, SOT-666RoHS

SI1050X-T1-GE3

MOSFET N-CH 8V 1.34A SC89-6

SI1050X-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

SOT-563, SOT-666

Series

TrenchFET®

Status

Active

$0.53 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI1050X-T1-GE3
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)8 V
Rds On (Max)86mOhm @ 1.34A, 4.5V
Vgs(th) (Max)900mV @ 250µA
Gate Charge (Qg)11.6 nC @ 5 V
Input Capacitance (Ciss)585 pF @ 4 V
Power Dissipation (Max)236mW (Ta)
Drive Voltage1.5V, 4.5V
Supplier Device PackageSC-89 (SOT-563F)
RoHSRoHS
Part StatusActive

Application & Notes

SI1050X-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 8 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 86mOhm @ 1.34A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±5V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id900mV @ 250µA
Rds On (Max) @ Id, Vgs86mOhm @ 1.34A, 4.5V
Power Dissipation (Max)236mW (Ta)
Gate Charge (Qg) (Max) @ Vgs11.6 nC @ 5 V
Drain to Source Voltage (Vdss)8 V
Input Capacitance (Ciss) (Max) @ Vds585 pF @ 4 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.34A (Ta)

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