Rochester Electronics, LLCTO-251-3 Short Leads, IPak, TO-251AARoHS
SFT1342-E
-60 V, -12 A, 62 MILLI OHM SINGL
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-251-3 Short Leads, IPak, TO-251AA
Status
Active
Datasheet
$0.27 / unit (market reference)
MOQ: 1110 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | SFT1342-E |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 62mOhm @ 6A, 10V |
| Vgs(th) (Max) | 2.6V @ 1mA |
| Gate Charge (Qg) | 26 nC @ 10 V |
| Input Capacitance (Ciss) | 1150 pF @ 20 V |
| Power Dissipation (Max) | 15W (Tc) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | IPAK/TP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SFT1342-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 62mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SFT1342-E
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 6A, 10V |
| Power Dissipation (Max) | 15W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
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