SILICON CARBIDE POWER MOSFET 120
Transistors Fets Mosfets Single
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Active
$42.88 / unit (market reference)
MOQ: 1 pcs
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| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | SCTH70N120G2V-7 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 30mOhm @ 50A, 18V |
| Vgs(th) (Max) | 4.9V @ 1mA |
| Gate Charge (Qg) | 150 nC @ 18 V |
| Input Capacitance (Ciss) | 3540 pF @ 800 V |
| Power Dissipation (Max) | 469W (Tc) |
| Drive Voltage | 18V |
| Supplier Device Package | H2PAK-7 |
| RoHS | RoHS |
| Part Status | Active |
SCTH70N120G2V-7 by STMicroelectronics is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 50A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| FET Type | N-Channel |
| Vgs (Max) | +22V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 50A, 18V |
| Power Dissipation (Max) | 469W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3540 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
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