Rohm SemiconductorTO-247-4RoHS
SCT3105KRC14
SICFET N-CH 1200V 24A TO247-4L
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-4
Status
Active
Datasheet
$19.00 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | SCT3105KRC14 |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 137mOhm @ 7.6A, 18V |
| Vgs(th) (Max) | 5.6V @ 3.81mA |
| Gate Charge (Qg) | 51 nC @ 18 V |
| Input Capacitance (Ciss) | 574 pF @ 800 V |
| Power Dissipation (Max) | 134W |
| Drive Voltage | 18V |
| Supplier Device Package | TO-247-4L |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SCT3105KRC14 by Rohm Semiconductor is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 137mOhm @ 7.6A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SCT3105KRC14
Alternatives & Replacements
View All →Rochester Electronics, LLCStockTO-247-4
IPZ60R017C7XKSA1
MOSFET N-CH 600V 109A TO247-4
Request QuoteRFQ →
Rochester Electronics, LLCStockTO-247-4
IPZ65R095C7XKSA1
MOSFET N-CH 650V 24A TO247-4
Request QuoteRFQ →
Rochester Electronics, LLCStockTO-247-4
IPZ60R099C7XKSA1
MOSFET N-CH 600V 22A TO247-4
Request QuoteRFQ →
Rochester Electronics, LLCStockTO-247-4
IPZ60R041P6FKSA1
MOSFET N-CH 600V 77.5A TO247-4
Request QuoteRFQ →
Wolfspeed, Inc.StockTO-247-4
C3M0030090K
SICFET N-CH 900V 63A TO247-4
Request QuoteRFQ →
Wolfspeed, Inc.StockTO-247-4
C3M0120100K
SICFET N-CH 1000V 22A TO247-4L
Request QuoteRFQ →
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +22V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 5.6V @ 3.81mA |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 7.6A, 18V |
| Power Dissipation (Max) | 134W |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.