SCT3030AW7TL
SICFET N-CH 650V 70A TO263-7
Transistors Fets Mosfets Single
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Active
$34.56 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | SCT3030AW7TL |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 39mOhm @ 27A, 18V |
| Vgs(th) (Max) | 5.6V @ 13.3mA |
| Gate Charge (Qg) | 104 nC @ 18 V |
| Input Capacitance (Ciss) | 1526 pF @ 500 V |
| Power Dissipation (Max) | 267W |
| Supplier Device Package | TO-263-7 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SCT3030AW7TL by Rohm Semiconductor is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 39mOhm @ 27A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SCT3030AW7TL
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +22V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| Power Dissipation (Max) | 267W |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
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