PC
Rochester Electronics, LLCSOT-563, SOT-666RoHS

SCH1430-TL-W

SCH1430 - POWER MOSFET, 20V, 2A,

SCH1430-TL-W by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

SOT-563, SOT-666

Status

Active

$0.11 / unit (market reference)

MOQ: 2857 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelSCH1430-TL-W
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)125mOhm @ 1A, 4.5V
Vgs(th) (Max)1.3V @ 1mA
Gate Charge (Qg)1.8 nC @ 4.5 V
Input Capacitance (Ciss)128 pF @ 10 V
Power Dissipation (Max)800mW (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device PackageSOT-563/SCH6
RoHSRoHS
Part StatusActive

Application & Notes

SCH1430-TL-W by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 125mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.3V @ 1mA
Rds On (Max) @ Id, Vgs125mOhm @ 1A, 4.5V
Power Dissipation (Max)800mW (Ta)
Gate Charge (Qg) (Max) @ Vgs1.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds128 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.