RW4E065GNTCL1
NCH 30V 6.5A, HEML1616L7, POWER
Transistors Fets Mosfets Single
6-PowerUFDFN
Active
$0.97 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RW4E065GNTCL1 |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 22.5mOhm @ 6.5A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 4.3 nC @ 10 V |
| Input Capacitance (Ciss) | 260 pF @ 15 V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | DFN1616-7T |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RW4E065GNTCL1 by Rohm Semiconductor is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-PowerUFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22.5mOhm @ 6.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RW4E065GNTCL1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 6.5A, 10V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
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