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Rohm SemiconductorTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

RSJ10HN06TL

MOSFET N-CH 60V 100A LPTS

RSJ10HN06TL by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelRSJ10HN06TL
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)4.2mOhm @ 50A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)202 nC @ 10 V
Input Capacitance (Ciss)11000 pF @ 10 V
Power Dissipation (Max)100W (Tc)
Drive Voltage4V, 10V
Supplier Device PackageLPTS
RoHSRoHS
Part StatusObsolete

Application & Notes

RSJ10HN06TL by Rohm Semiconductor is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.2mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
Power Dissipation (Max)100W (Tc)
Gate Charge (Qg) (Max) @ Vgs202 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Ta)

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