RS1E260ATTB1
MOSFET P-CH 30V 26A/80A 8HSOP
Transistors Fets Mosfets Single
8-PowerTDFN
Active
$3.00 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RS1E260ATTB1 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 3.1mOhm @ 26A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 175 nC @ 10 V |
| Input Capacitance (Ciss) | 7850 pF @ 15 V |
| Power Dissipation (Max) | 3W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-HSOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RS1E260ATTB1 by Rohm Semiconductor is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.1mOhm @ 26A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RS1E260ATTB1
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 26A, 10V |
| Power Dissipation (Max) | 3W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7850 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 80A (Tc) |
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