RQ3P300BETB1
MOSFET N-CH 100V 10A/36A 8HSMT
Transistors Fets Mosfets Single
8-PowerVDFN
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RQ3P300BETB1 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 21mOhm @ 10A, 10V |
| Vgs(th) (Max) | 4V @ 200µA |
| Gate Charge (Qg) | 19.1 nC @ 10 V |
| Input Capacitance (Ciss) | 1250 pF @ 50 V |
| Power Dissipation (Max) | 2W (Ta), 32W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-HSMT (3.2x3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RQ3P300BETB1 by Rohm Semiconductor is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 21mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RQ3P300BETB1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 10V |
| Power Dissipation (Max) | 2W (Ta), 32W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 19.1 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 36A (Tc) |
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