RN2117(TE85L,F)
TRANS PREBIAS PNP 50V 0.1A SSM
Transistors Bipolar Bjt Single Pre Biased
SC-75, SOT-416
Active
$0.40 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN2117(TE85L,F) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 100 mW |
| Supplier Device Package | SSM |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RN2117(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-75, SOT-416 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RN2117(TE85L,F)
Alternatives & Replacements
View All →PDTC144TE,115
TRANS PREBIAS NPN 150MW SC75
DTC143TET1
TRANS PREBIAS NPN 200MW SC75
DTC115EET1
TRANS PREBIAS NPN 200MW SC75
DTA143EET1
TRANS PREBIAS PNP 200MW SC75
DTA113EET1G
TRANS PREBIAS PNP 50V 100MA SC75
DTA124XET1G
TRANS PREBIAS PNP 50V 100MA SC75
All Technical Specifications
| Power - Max | 100 mW |
| Transistor Type | PNP - Pre-Biased |
| Resistor - Base (R1) | 10 kOhms |
| Frequency - Transition | 200 MHz |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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