Toshiba Semiconductor and StorageSOT-563, SOT-666RoHS
RN1911FETE85LF
TRANS 2NPN PREBIAS 0.1W ES6
Category
Subcategory
Transistors Bipolar Bjt Arrays Pre Biased
Package
SOT-563, SOT-666
Status
Active
$0.21 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN1911FETE85LF |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 100mW |
| Supplier Device Package | ES6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RN1911FETE85LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 100mW |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Resistor - Base (R1) | 10kOhms |
| Frequency - Transition | 250MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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