onsemiSOT-563, SOT-666RoHS
NSBC123JPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
Category
Subcategory
Transistors Bipolar Bjt Arrays Pre Biased
Package
SOT-563, SOT-666
Status
Active
$0.47 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NSBC123JPDXV6T1G |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 500mW |
| Supplier Device Package | SOT-563 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NSBC123JPDXV6T1G by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 500mW |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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