RN1911,LF(CT
NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Transistors Bipolar Bjt Arrays Pre Biased
6-TSSOP, SC-88, SOT-363
Active
$0.05 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN1911,LF(CT |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 100mW |
| Supplier Device Package | US6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RN1911,LF(CT by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RN1911,LF(CT
Alternatives & Replacements
View All →NSB4904DW1T1G
TRANS PREBIAS 1NPN 1PNP 50V SC88
MUN5235DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363
PUMB1,115
TRANS PREBIAS 2PNP 50V 6TSSOP
NSB13211DW6T1G
TRANS NPN/PNP PREBIAS 0.23W SC88
NSM11156DW6T1G
TRANS PNP PREBIAS/PNP 0.23W SC88
NSM21356DW6T1G
TRANS NPN PREBIAS/PNP SOT363
All Technical Specifications
| Power - Max | 100mW |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Resistor - Base (R1) | 10kOhms |
| Frequency - Transition | 250MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.