RN1709,LF
NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Transistors Bipolar Bjt Arrays Pre Biased
5-TSSOP, SC-70-5, SOT-353
Active
$0.05 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN1709,LF |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 200mW |
| Supplier Device Package | USV |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RN1709,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 5-TSSOP, SC-70-5, SOT-353 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RN1709,LF
Alternatives & Replacements
View All →UMC3NT1G
TRANS PREBIAS NPN/PNP 50V SC88A
RN1707,LF
NPNX2 BRT Q1BSR10KOHM Q1BER47KOH
RN2701,LF
PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
UMG1NTR
TRANS 2NPN PREBIAS 0.3W UMT5
RN1701,LF
NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
UMA2NTR
TRANS PREBIAS DUAL PNP UMT5
All Technical Specifications
| Power - Max | 200mW |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Resistor - Base (R1) | 47kOhms |
| Frequency - Transition | 250MHz |
| Resistor - Emitter Base (R2) | 22kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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