RJU002N06T106
MOSFET N-CH 60V 200MA UMT3
Transistors Fets Mosfets Single
SC-70, SOT-323
Active
$0.43 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RJU002N06T106 |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 2.3Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Input Capacitance (Ciss) | 18 pF @ 10 V |
| Power Dissipation (Max) | 200mW (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | UMT3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RJU002N06T106 by Rohm Semiconductor is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.3Ohm @ 200mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJU002N06T106
Alternatives & Replacements
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MOSFET N-CH 60V 240MA SOT323
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 200mA, 4.5V |
| Power Dissipation (Max) | 200mW (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
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