R6507ENXC7G
650V 7A TO-220FM, LOW-NOISE POWE
Transistors Fets Mosfets Single
TO-220-3 Full Pack
Active
$2.67 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | R6507ENXC7G |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 665mOhm @ 2.4A, 10V |
| Vgs(th) (Max) | 4V @ 200µA |
| Gate Charge (Qg) | 20 nC @ 10 V |
| Input Capacitance (Ciss) | 390 pF @ 25 V |
| Power Dissipation (Max) | 46W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-220FM |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
R6507ENXC7G by Rohm Semiconductor is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 665mOhm @ 2.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for R6507ENXC7G
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Rds On (Max) @ Id, Vgs | 665mOhm @ 2.4A, 10V |
| Power Dissipation (Max) | 46W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
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