QS8M31TR
QS8M31 IS COMPLEX TYPE MOSFET(P+
Transistors Fets Mosfets Arrays
8-SMD, Flat Lead
Active
$0.76 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | QS8M31TR |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) | 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA, 3V @ 1mA |
| Gate Charge (Qg) | 4nC @ 5V, 7.2nC @ 5V |
| Input Capacitance (Ciss) | 270pF @ 10V, 750pF @ 10V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Supplier Device Package | TSMT8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
QS8M31TR by Rohm Semiconductor is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SMD, Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for QS8M31TR
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA, 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 5V, 7.2nC @ 5V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V, 750pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 2A (Ta) |
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