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Rohm SemiconductorSOT-23-5 Thin, TSOT-23-5RoHS

QS5U12TR

MOSFET N-CH 30V 2A TSMT5

QS5U12TR by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-5 Thin, TSOT-23-5

Status

Active

Datasheet

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$0.71 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelQS5U12TR
Package / CaseSOT-23-5 Thin, TSOT-23-5
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)100mOhm @ 2A, 4.5V
Vgs(th) (Max)1.5V @ 1mA
Gate Charge (Qg)3.9 nC @ 4.5 V
Input Capacitance (Ciss)175 pF @ 10 V
Power Dissipation (Max)1.25W (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device PackageTSMT5
RoHSRoHS
Part StatusActive

Application & Notes

QS5U12TR by Rohm Semiconductor is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-5 Thin, TSOT-23-5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for QS5U12TR

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Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Rohm SemiconductorStockSOT-23-5 Thin, TSOT-23-5

QS5U28TR

MOSFET P-CH 20V 2A TSMT5

Request QuoteRFQ →
Rohm SemiconductorStockSOT-23-5 Thin, TSOT-23-5

QS5U17TR

MOSFET N-CH 30V 2A TSMT5

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Rohm SemiconductorStockSOT-23-5 Thin, TSOT-23-5

QS5U13TR

MOSFET N-CH 30V 2A TSMT5

Request QuoteRFQ →
Rohm SemiconductorStockSOT-23-5 Thin, TSOT-23-5

QS5U36TR

MOSFET N-CH 20V 2.5A TSMT5

Request QuoteRFQ →
Rohm SemiconductorStockSOT-23-5 Thin, TSOT-23-5

QS5U27TR

MOSFET P-CH 20V 1.5A TSMT5

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
FET FeatureSchottky Diode (Isolated)
Vgs(th) (Max) @ Id1.5V @ 1mA
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Power Dissipation (Max)1.25W (Ta)
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds175 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

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