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NXP USA Inc.TO-236-3, SC-59, SOT-23-3RoHS

PMV56XN,215

MOSFET N-CH 20V 3.76A TO236AB

PMV56XN,215 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

TrenchMOS™

Status

Obsolete

$0.10 / unit (market reference)

MOQ: 2885 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPMV56XN,215
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)85mOhm @ 3.6A, 4.5V
Vgs(th) (Max)650mV @ 1mA
Gate Charge (Qg)5.4 nC @ 4.5 V
Input Capacitance (Ciss)230 pF @ 10 V
Power Dissipation (Max)1.92W (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device PackageSOT-23 (TO-236AB)
RoHSRoHS
Part StatusObsolete

Application & Notes

PMV56XN,215 by NXP USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 85mOhm @ 3.6A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for PMV56XN,215

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Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Diotec SemiconductorStockTO-236-3, SC-59, SOT-23-3

MMFTP84

MOSFET P-CH 60V 130MA SOT23-3

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Rochester Electronics, LLCStockTO-236-3, SC-59, SOT-23-3

CPH3355-TL-H

CPH3355 - SINGLE P-CHANNEL POWER

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NextGen ComponentsStockTO-236-3, SC-59, SOT-23-3

2N7002K

MOSFET SOT-23 N Channel 60V

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NXP USA Inc.StockTO-236-3, SC-59, SOT-23-3

PMV22EN,215

MOSFET N-CH 30V 5.2A TO236AB

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onsemiStockTO-236-3, SC-59, SOT-23-3

CPH3350-TL-W

MOSFET P-CH 20V 3A 3CPH

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onsemiStockTO-236-3, SC-59, SOT-23-3

CPH3455-TL-W

MOSFET N-CH 35V 3A 3CPH

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id650mV @ 1mA
Rds On (Max) @ Id, Vgs85mOhm @ 3.6A, 4.5V
Power Dissipation (Max)1.92W (Tc)
Gate Charge (Qg) (Max) @ Vgs5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.76A (Tc)

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