PC
Nexperia USA Inc.TO-236-3, SC-59, SOT-23-3RoHS

PMV30UN2R

MOSFET N-CH 20V 4.2A TO236AB

PMV30UN2R by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

$0.47 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPMV30UN2R
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)32mOhm @ 4.2A, 4.5V
Vgs(th) (Max)900mV @ 250µA
Gate Charge (Qg)11 nC @ 4.5 V
Input Capacitance (Ciss)655 pF @ 10 V
Power Dissipation (Max)490mW (Ta), 5W (Tc)
Drive Voltage1.2V, 4.5V
Supplier Device PackageTO-236AB
RoHSRoHS
Part StatusActive

Application & Notes

PMV30UN2R by Nexperia USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 32mOhm @ 4.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id900mV @ 250µA
Rds On (Max) @ Id, Vgs32mOhm @ 4.2A, 4.5V
Power Dissipation (Max)490mW (Ta), 5W (Tc)
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds655 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)

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