PMG45UN,115
MOSFET N-CH 20V 3A 6TSSOP
Transistors Fets Mosfets Single
6-TSSOP, SC-88, SOT-363
Obsolete
$0.09 / unit (market reference)
MOQ: 3206 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PMG45UN,115 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 55mOhm @ 3A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 3.3 nC @ 4.5 V |
| Input Capacitance (Ciss) | 184 pF @ 10 V |
| Power Dissipation (Max) | 375mW (Ta), 4.35W (Tc) |
| Supplier Device Package | 6-TSSOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PMG45UN,115 by NXP USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 55mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMG45UN,115
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 3A, 4.5V |
| Power Dissipation (Max) | 375mW (Ta), 4.35W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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