PC
NXP USA Inc.SC-70, SOT-323RoHS

PMF63UN,115

MOSFET N-CH 20V 1.8A SOT323-3

PMF63UN,115 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

SC-70, SOT-323

Status

Obsolete

$0.06 / unit (market reference)

MOQ: 4808 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPMF63UN,115
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)74mOhm @ 1.8A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)3.3 nC @ 4.5 V
Input Capacitance (Ciss)185 pF @ 10 V
Power Dissipation (Max)275mW (Ta), 1.785W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device PackageSC-70
RoHSRoHS
Part StatusObsolete

Application & Notes

PMF63UN,115 by NXP USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 74mOhm @ 1.8A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs74mOhm @ 1.8A, 4.5V
Power Dissipation (Max)275mW (Ta), 1.785W (Tc)
Gate Charge (Qg) (Max) @ Vgs3.3 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds185 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)

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