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Panjit International Inc.SOT-563, SOT-666RoHS

PJX8603_R1_00001

COMPLEMENTARY ENHANCEMENT MODE M

Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-563, SOT-666

Status

Active

$0.43 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJX8603_R1_00001
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel Complementary
Drain to Source Voltage (Vdss)50V, 60V
Rds On (Max)1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Vgs(th) (Max)1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg)0.95nC @ 4.5V, 1.1nC @ 4.5V
Input Capacitance (Ciss)36pF @ 25V, 51pF @ 25V
Power Dissipation (Max)300mW (Ta)
Supplier Device PackageSOT-563
RoHSRoHS
Part StatusActive

Application & Notes

PJX8603_R1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 50V, 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN and P-Channel Complementary
FET FeatureStandard
Power - Max300mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA, 2.5V @ 250µA
Rds On (Max) @ Id, Vgs1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs0.95nC @ 4.5V, 1.1nC @ 4.5V
Drain to Source Voltage (Vdss)50V, 60V
Input Capacitance (Ciss) (Max) @ Vds36pF @ 25V, 51pF @ 25V
Current - Continuous Drain (Id) @ 25°C360mA (Ta), 200mA (Ta)

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