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Panjit International Inc.SOT-563, SOT-666RoHS

PJX8601_R1_00001

COMPLEMENTARY ENHANCEMENT MODE M

Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-563, SOT-666

Status

Active

$0.39 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJX8601_R1_00001
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel Complementary
Drain to Source Voltage (Vdss)20V
Rds On (Max)400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max)900mV @ 250µA, 1V @ 250µA
Gate Charge (Qg)1.4nC @ 4.5V
Input Capacitance (Ciss)67pF @ 10V, 38pF @ 10V
Power Dissipation (Max)300mW (Ta)
Supplier Device PackageSOT-563
RoHSRoHS
Part StatusActive

Application & Notes

PJX8601_R1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN and P-Channel Complementary
FET FeatureStandard
Power - Max300mW (Ta)
Vgs(th) (Max) @ Id900mV @ 250µA, 1V @ 250µA
Rds On (Max) @ Id, Vgs400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)

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