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Panjit International Inc.TO-236-3, SC-59, SOT-23-3RoHS

PJA3435_R1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

$0.45 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandPanjit International Inc.
ModelPJA3435_R1_00001
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)1.4 nC @ 4.5 V
Input Capacitance (Ciss)38 pF @ 10 V
Power Dissipation (Max)500mW (Ta)
Drive Voltage1.2V, 4.5V
Supplier Device PackageSOT-23
RoHSRoHS
Part StatusActive

Application & Notes

PJA3435_R1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 500mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max)500mW (Ta)
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds38 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)

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