PDTC114EMB,315
PDTC114EMB - UPN RESISTOR-EQUIPP
Transistors Bipolar Bjt Single Pre Biased
SC-101, SOT-883
Active
$0.02 / unit (market reference)
MOQ: 15000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PDTC114EMB,315 |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 250 mW |
| Supplier Device Package | DFN1006B-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PDTC114EMB,315 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-101, SOT-883 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PDTC114EMB,315
Alternatives & Replacements
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TRANS PREBIAS NPN 50V DFN1006-3
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TRANS PREBIAS NPN 50V DFN1006-3
All Technical Specifications
| Power - Max | 250 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 10 kOhms |
| Frequency - Transition | 230 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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