PC
onsemiSOT-563, SOT-666RoHS

NTZS3151PT1H

MOSFET P-CH 20V 860MA SOT563-6

NTZS3151PT1H by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

SOT-563, SOT-666

Status

Obsolete

$0.08 / unit (market reference)

MOQ: 3606 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTZS3151PT1H
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)150mOhm @ 950mA, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)5.6 nC @ 4.5 V
Input Capacitance (Ciss)458 pF @ 16 V
Power Dissipation (Max)170mW (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device PackageSOT-563
RoHSRoHS
Part StatusObsolete

Application & Notes

NTZS3151PT1H by onsemi is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 950mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs150mOhm @ 950mA, 4.5V
Power Dissipation (Max)170mW (Ta)
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds458 pF @ 16 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C860mA (Ta)

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