NTHD5903T1G
MOSFET 2P-CH 20V 2.2A CHIPFET
Transistors Fets Mosfets Arrays
8-SMD, Flat Lead
Obsolete
$0.27 / unit (market reference)
MOQ: 1110 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTHD5903T1G |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 155mOhm @ 2.2A, 4.5V |
| Vgs(th) (Max) | 600mV @ 250µA |
| Gate Charge (Qg) | 7.4nC @ 4.5V |
| Power Dissipation (Max) | 1.1W |
| Supplier Device Package | ChipFET™ |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTHD5903T1G by onsemi is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SMD, Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 155mOhm @ 2.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTHD5903T1G
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.1W |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
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