PC
onsemi8-SMD, Flat LeadRoHS

NTHD2110TT1G

MOSFET P-CH 12V 4.5A CHIPFET

NTHD2110TT1G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-SMD, Flat Lead

Status

Obsolete

$0.30 / unit (market reference)

MOQ: 995 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTHD2110TT1G
Package / Case8-SMD, Flat Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)40mOhm @ 6.4A, 4.5V
Vgs(th) (Max)850mV @ 250µA
Gate Charge (Qg)14 nC @ 4.5 V
Input Capacitance (Ciss)1072 pF @ 6 V
Power Dissipation (Max)1.1W (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device PackageChipFET™
RoHSRoHS
Part StatusObsolete

Application & Notes

NTHD2110TT1G by onsemi is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SMD, Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40mOhm @ 6.4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id850mV @ 250µA
Rds On (Max) @ Id, Vgs40mOhm @ 6.4A, 4.5V
Power Dissipation (Max)1.1W (Ta)
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds1072 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)

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