NTH4LN019N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Transistors Fets Mosfets Single
TO-247-4
SuperFET® III
Active
$20.36 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTH4LN019N65S3H |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 19.3mOhm @ 37.5A, 10V |
| Vgs(th) (Max) | 4V @ 14.3mA |
| Gate Charge (Qg) | 282 nC @ 10 V |
| Input Capacitance (Ciss) | 15993 pF @ 400 V |
| Power Dissipation (Max) | 625W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTH4LN019N65S3H by onsemi is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 19.3mOhm @ 37.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTH4LN019N65S3H
Alternatives & Replacements
View All →IPZ60R017C7XKSA1
MOSFET N-CH 600V 109A TO247-4
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IPZ60R099C7XKSA1
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IPZ60R041P6FKSA1
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C3M0030090K
SICFET N-CH 900V 63A TO247-4
C3M0120100K
SICFET N-CH 1000V 22A TO247-4L
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 14.3mA |
| Rds On (Max) @ Id, Vgs | 19.3mOhm @ 37.5A, 10V |
| Power Dissipation (Max) | 625W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 282 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15993 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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