PC
onsemiTO-247-4RoHS

NTH4L045N065SC1

SILICON CARBIDE MOSFET, NCHANNEL

Subcategory

Transistors Fets Mosfets Single

Package

TO-247-4

Status

Active

$16.52 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTH4L045N065SC1
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)50mOhm @ 25A, 18V
Vgs(th) (Max)4.3V @ 8mA
Gate Charge (Qg)105 nC @ 18 V
Input Capacitance (Ciss)1870 pF @ 325 V
Power Dissipation (Max)187W (Tc)
Drive Voltage15V, 18V
Supplier Device PackageTO-247-4L
RoHSRoHS
Part StatusActive

Application & Notes

NTH4L045N065SC1 by onsemi is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 25A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)+22V, -8V
TechnologySiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id4.3V @ 8mA
Rds On (Max) @ Id, Vgs50mOhm @ 25A, 18V
Power Dissipation (Max)187W (Tc)
Gate Charge (Qg) (Max) @ Vgs105 nC @ 18 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds1870 pF @ 325 V
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Current - Continuous Drain (Id) @ 25°C55A (Tc)

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