NTE912
IC-3 ISOLATED TRANS. 14-LEAD
Transistors Bipolar Bjt Arrays
14-DIP (0.300", 7.62mm)
Active
$6.59 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE912 |
| Package / Case | 14-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Power Dissipation (Max) | 750mW |
| Supplier Device Package | 14-PDIP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE912 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 14-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE912
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All Technical Specifications
| Power - Max | 750mW |
| Transistor Type | 5 NPN |
| Frequency - Transition | 550MHz |
| Vce Saturation (Max) @ Ib, Ic | 230mV @ 1mA, 10mA |
| Current - Collector (Ic) (Max) | 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1mA, 3V |
| Voltage - Collector Emitter Breakdown (Max) | 24V |
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