PC
NTE Electronics, IncTO-226-3, TO-92-3 Long BodyRoHS

NTE399

T-NPN SI-VIDEO OUTPUT TO-92M

NTE399 by NTE Electronics, Inc
Subcategory

Transistors Bipolar Bjt Single

Package

TO-226-3, TO-92-3 Long Body

Status

Active

$3.60 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNTE Electronics, Inc
ModelNTE399
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Power Dissipation (Max)900 mW
Supplier Device PackageTO-92L
RoHSRoHS
Part StatusActive

Application & Notes

NTE399 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max900 mW
Transistor TypeNPN
Frequency - Transition50MHz
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)300 V

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