NTE2960
MOSFET-N-CHAN ENHANCEMENT
Transistors Fets Mosfets Arrays
TO-220-3 Full Pack
Active
$8.63 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE2960 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| FET Type | 2 N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Rds On (Max) | 2Ohm @ 3A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Input Capacitance (Ciss) | 1380pF @ 25V |
| Power Dissipation (Max) | 40W |
| Supplier Device Package | TO-220 Full Pack |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE2960 by NTE Electronics, Inc is an N-channel power MOSFET rated at 900V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2Ohm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE2960
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All Technical Specifications
| FET Type | 2 N-Channel |
| FET Feature | Standard |
| Power - Max | 40W |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 3A, 10V |
| Drain to Source Voltage (Vdss) | 900V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
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