NTE2367
T-NPN SI DIGITAL 4.7K
Transistors Bipolar Bjt Single Pre Biased
TO-226-3, TO-92-3 Short Body
Active
$0.68 / unit (market reference)
MOQ: 3 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE2367 |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 300 mW |
| Supplier Device Package | TO-92S |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE2367 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Short Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE2367
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All Technical Specifications
| Power - Max | 300 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 4.7 kOhms |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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